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Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTH250N075T
IXTQ250N075T
V DSS
I D25
R DS(on)
= 75 V
= 250 A
≤ 4.0 m ?
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Maximum Ratings
75 V
75 V
G
D
S
(TAB)
V GSM
I D25
I LRMS
I DM
Transient
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
± 20
250
75
560
V
A
A
A
TO-3P (IXTQ)
I AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
40
1.5
3
A
J
V/ns
G
D
S
(TAB)
T J ≤ 175 ° C, R G = 3.3 ?
P D
T J
T JM
T stg
T C = 25 ° C
550
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
° C
° C
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
M d
Weight
Mounting torque
TO-3P
TO-247
1.13 / 10 Nm/lb.in.
5.5 g
6 g
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
High power density
Applications
BV DSS
V GS = 0 V, I D = 250 μ A
75
V
Automotive
- Motor Drives
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.0
4.0
± 200
5
250
V
nA
μ A
μ A
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
R DS(on)
V GS = 10 V, I D = 50 A, Notes 1, 2
3.3
4.0
m ?
Applications
DS99637(11/06)
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